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参数资料
| 型号： | FQI1P50TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 500V 1.5A I2PAK |
| 标准包装： | 1,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 欧姆 @ 750mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FQB1P50
Device
FQB1P50TM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Elerical Characteristics
Symbol Parameter
T C = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -500 V, V GS = 0 V
V DS = -400 V, T C = 125°C
V GS = -30 V, V DS = 0 V
V GS = 30 V, V DS = 0 V
-500
--
--
--
--
--
--
-
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
-3.0
--
-5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = -10 V, I D = -0.75 A
V DS = -50 V, I D = -0.75 A
--
--
8.0
1.26
10.5
--
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
270
40
6.0
350
50
8.0
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -250 V, I D = -1.5 A,
R G = 25 ?
V DS = -400 V, I D = -1.5 A,
V GS = -10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
9.0
25
27
30
11
2.0
5.6
30
60
65
70
14
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
-1.5
-6.0
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -1.5 A
V GS = 0 V, I S = -1.5 A,
dI F / dt = 100 A/ μ s
--
--
--
--
200
0.7
-5.0
--
--
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 88mH, I AS = -1.5A, V DD = -50V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ -1.5A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS, Starting T J = 25°C
4 . Essentially independent of operating temperature
? 2000 Fairchild Semiconductor Corporation
FQB 1P50 Rev. C 1
2
www.fairchildsemi.com
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