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参数资料
| 型号： | FQI50N06LTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 52.4A I2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 52.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 26.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1630pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQB50N06LTM
Top Mark
FQB50N06L
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 60 V, V GS = 0 V
V DS = 48 V, T C = 150°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
60
--
--
--
--
--
--
0.06
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
1.0
--
2.5
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 26.2 A
V GS = 5 V, I D =26.2 A
V DS = 25 V, I D = 26.2 A
--
--
--
0.017
0.020
40
0.021
0.025
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 30 V, I D = 26.2 A,
R G = 25 ?
--
--
--
--
--
--
1250
445
90
20
380
80
1630
580
120
50
770
170
pF
pF
pF
ns
ns
ns
t f
Turn-Off Fall Time
(N ote 4)
--
145
300
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 48 V, I D = 52.4 A,
V GS = 5 V
(N ote 4)
--
--
--
24.5
6
14.5
32
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
52.4
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
210
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 52.4 A
V GS = 0 V, I S = 52.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
65
125
1.5
--
--
V
ns
nC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 300 μ H, I AS = 52.4 A, V DD = 25 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ 52.4 A, di/dt ≤ 300 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C
4. Essentially independent of operating temperature.
?200 0 Fairchild Semiconductor Corporation
FQB50N06L Rev. C 1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FQI50N06TU | 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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