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| 型号： | FQL40N50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 40A TO-264 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 25 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 200nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7500pF @ 25V |
| 功率 - 最大： | 460W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
November 2013
FQL40N50
N-Channel QFET ? MOSFET
50 0 V, 40 A, 11 0 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 40 A, 500 V, R DS(on) = 11 0 m ? (Max.) @ V GS = 10 V,
I D = 20 A
? Low Gate Charge (Typ. 155 nC)
? Low Crss (Typ. 95 pF)
? 100% Avalanche Tested
D
G
G
D
S
TO-264
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQL40N50
500
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
40
25
A
A
I DM
Drain Current
- Pulsed
(Note 1)
160
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8 " from case for 5 seconds .
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1780
40
46
4.5
460
3.7
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
+ θ
+ θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQL40N50
0.27
30
6 ?
6 ?
?200 0 Fairchild Semiconductor Corporation
FQL40N50 Rev. C 1
1
www.fairchildsemi.com
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