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| 型号： | FQN1N60CBU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 0.3A TO-92 |
| 标准包装： | 1,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 欧姆 @ 150mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 170pF @ 25V |
| 功率 - 最大： | 1W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
December 2013
FQN1N60C
N-Channel QFET ? MOSFET
600 V, 0. 30 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 0.3 0 A, 6 00 V, R DS(on) = 11.5 ? (Max.) @ V GS = 10 V, I D = 0.1 5 A
? Low Gate Charge (Typ. 4. 8 nC)
? Low Crss (Typ. 3.5 pF)
? 100% Avalanche Tested
D
G
D
S
TO-92
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQN1N60C TA
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
0.3
0.18
A
A
I DM
Drain Current
- Pulsed
(Note 1)
1.2
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C)
Power Dissipation (T L = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 " from Case for 5 Seconds .
(Note 2)
(Note 1)
(Note 1)
(Note 3)
33
0.3
0.3
4.5
1
3
0.02
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
FQN1N60CTA
Unit
R θ J L
R θ JA
Thermal Resistance, Junction - to -Lead , Max.
Thermal Resistance, Junction - to - Ambient, Max.
(Note 5 a )
(Note 5 b)
50
140
o C/W
?200 5 Fairchild Semiconductor Corporation
FQN1N60C Rev C 1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FQN1N60CTA | 功能描述:MOSFET 600V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQN1N60CTAG | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FQNL1N50B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FQNL1N50BBU | 功能描述:MOSFET 500V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQNL1N50BBU_Q | 功能描述:MOSFET 500V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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