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| 型号： | FSB52006S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | MODULE SPM SMART PWR SPM23-BA |
| 标准包装： | 450 |
| 系列： | SPM™ |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 2.6A |
| 电压： | 60V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23BA |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
Recommended Operating Condition
Symbol
V PN
V CC
V BS
V IN(ON)
V IN(OFF)
t dead
f PWM
T C
Parameter
Supply Voltage
Control Supply Voltage
High-Side Bias Voltage
Input ON Threshold Voltage
Input OFF Threshold Voltage
Blanking Time for Preventing
Arm-Short
PWM Switching Frequency
Case Temperature
Conditions
Applied Between P and N
Applied Between V CC and COM
Applied Between V B and V S
Applied Between IN and COM
V CC = V BS = 13.5 ~ 16.5 V, T J ?? 150°C
T J ?? 125°C
T J ?? 125°C
Min.
-
13.5
13.5
3.0
0
1.0
-
-20
Typ.
45
15.0
15.0
-
-
-
15
-
Max.
55
16.5
16.5
V CC
0.6
-
-
100
Unit
V
V
V
V
V
? s
kHz
°C
These values depend on PWM
control algorithm
15-V Line
R 2
R 1
D 1
P
V DC
HIN
LIN
Output
Note
Micom
R 5
C 5
VCC
HIN
LIN
COM
VB
HO
VS
LO
Inverter
Output
C 3
0
0
1
0
1
0
Z
0
V DC
Both FRFET Off
Low side FRFET On
High side FRFET On
10 ? F
C 2
C 1
One-Leg Diagram of SPM ? 5 Product
N
R 3
1
Open
1
Open
Forbidden
Z
Shoot through
Same as (0,0)
* Example of bootstrap paramters:
C 1 = C 2 = 1 ? F ceramic capacitor,
R 1 = 56 ? ? R 2 = 20 ?
Figure 2. Recommended MCU Interface and Bootstrap Circuit with Parameters
3rd Notes:
1. It is recommended the bootstrap diode D 1 to have soft and fast recovery characteristics with 100 V Rating.
2. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
3. RC-coupling (R 5 and C 5 ) and C 4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.
4. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C 1 , C 2
and C 3 should have good high-frequency characteristics to absorb high-frequency ripple-current.
14.50mm
3.80mm
MOSFET
Case Temperature(Tc)
Detecting Point
Figure 3. Case Temperature Measurement
3rd Notes:
5. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement.
?2013 Fairchild Semiconductor Corporation
FSB52006S Rev. C4
5
www.fairchildsemi.com
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