参数资料
型号: GL4800E0000F
厂商: Sharp Microelectronics
文件页数: 1/9页
文件大小: 0K
描述: EMITTER IR 950NM 3.0MW TH
产品变化通告: Emitter Chip Change 10/Aug/2007
标准包装: 1,000
电流 - DC 正向(If): 100mA
辐射强度(le)最小值@正向电流: 0.7mW/sr @ 20mA
波长: 950nm
正向电压: 1.2V
视角: 60°
方向: 侧视图
安装类型: 通孔
封装/外壳: 径向
包装:
其它名称: 425-1939-5
GL4800E0000F
GL4800E0000F
■ Features
1. Side view emission type
2. Plastic mold with resin lens
3. Medium directivity angle ( Δθ : ±30° TYP.)
Peak emission wavelength: 950 nm TYP.
4. Radiant flux φ e: 0.7 mW MIN.
5. Lead free and RoHS directive component
Infrared Emitting Diode
■ Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese: );
refer to page 7
■ Applications
1.
2.
3.
4.
5.
6.
7.
8.
Optoelectronic switching
Office automation equipment
Audio visual equipment
Home appliances
Telecommunication equipment
Measuring equipment
Tooling machines
Computers
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D1-A01001EN
Date: March 30, 2007
?SHARP Corporation
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