参数资料
型号: GL4800E0000F
厂商: Sharp Microelectronics
文件页数: 7/9页
文件大小: 0K
描述: EMITTER IR 950NM 3.0MW TH
产品变化通告: Emitter Chip Change 10/Aug/2007
标准包装: 1,000
电流 - DC 正向(If): 100mA
辐射强度(le)最小值@正向电流: 0.7mW/sr @ 20mA
波长: 950nm
正向电压: 1.2V
视角: 60°
方向: 侧视图
安装类型: 通孔
封装/外壳: 径向
包装:
其它名称: 425-1939-5
GL4800E0000F
■ Presence of ODCs (RoHS Compliance)
This product shall not contain the following materials, and they are not used in the production process for this
product:
? Regulated substances: CFCs, Halon, Carbon tetrachloride, 1,1,1-Trichloroethane (Methylchloroform). Specific
brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
? Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl
ethers (PBDE).
? Content information about the six substances specified in “Management Methods for Control of Pollution
Caused by Electronic Information Products Regulation” (Chinese: )
Toxic and Hazdardous Substances
Category
Lead (Pb) mercury (Hg) Cadmium (Cd)
Hexavalent
chromiun (Cr 6+ )
Polybrominated
biphenyls (PBB)
Polybrominated
diphenyl ethers
(PBDE)
Infrared Emitting Diode
?
?
?
?
?
?
NOTE: ? indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement
as described in SJ/T 11363-2006 standard.
Sheet No.: D1-A01001EN
7
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