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参数资料
| 型号： | GS717SD |
| 厂商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面贴装肖特基势垒二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 187K |
| 代理商： | GS717SD |
1/2
ISSUED DATE :2004/09/15
REVISED DATE :
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G S
S 771177S
S D
D
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S C
C H
H O
O T
T T
T K
K Y
Y B
B A
A R
R R
R II E
E R
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D II O
O D
D E
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V O L T A G E 4 0 V, C U R R E N T 0 . 0 3 A
Description
The GS717SD is designed for general purpose detection and high speed switching.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
:
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Peak Repetitive Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRMS
28
V
Maximum DC Blocking Voltage
VDC
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
0.2
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
pF
Maximum Average Forward Rectified Current
Io
0.03
A
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Characteristics
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
VF
0.37
V
IF = 1mA
Maximum Average Reverse Current
IR
1.0
uA
VR = 10V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.
2. ESD sensitive product handling required.
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