参数资料
型号: GS74116
厂商: GSI TECHNOLOGY
英文描述: 4Mb(256K x 16Bit)Asynchronous SRAM(4M位(256K x 16位)异步静态RAM)
中文描述: 4Mb的(256 × 16Bit的)异步SRAM(4分位(256K × 16位)异步静态RAM)的
文件页数: 5/14页
文件大小: 184K
代理商: GS74116
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
5/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
AC Test Conditions
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
-40 to 85°C
8ns
10ns
12ns
15ns
10ns
12ns
15ns
Operating
Supply
Current
I
DD
CE
V
IL
All other inputs
V
IH
or
V
IL
Mn. cycle time
I
OUT
= 0 mA
170mA
145mA
130mA
110mA
155mA
140mA
120mA
Standby
Current
I
SB1
CE
V
IH
All other inputs
V
IH
or
V
IL
Mn. cycle time
70mA
65mA
60mA
55mA
75mA
70mA
65mA
Standby
Current
I
SB2
CE
V
DD
- 0.2V
All other inputs
V
DD
- 0.2V or
0.2V
30mA
40mA
DQ
VT=1.4V
50
30pF
1
DQ
3.3V
Output Load 1
Output Load 2
589
434
5pF
1
Note:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
3.
Parameter
Conditions
Input high level
V
IH
=2.4V
Input low level
V
IL
=0.4V
Input rise time
tr=1V/ns
Input fall time
tf=1V/ns
Input reference level
1.4V
Output reference level
1.4V
Output load
Fig. 1& 2
相关PDF资料
PDF描述
GS78116 8Mb(512K x 16Bit)Asynchronous SRAM(8M位(512K x 16位)异步静态RAM)
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