参数资料
型号: GS74116
厂商: GSI TECHNOLOGY
英文描述: 4Mb(256K x 16Bit)Asynchronous SRAM(4M位(256K x 16位)异步静态RAM)
中文描述: 4Mb的(256 × 16Bit的)异步SRAM(4分位(256K × 16位)异步静态RAM)的
文件页数: 7/14页
文件大小: 184K
代理商: GS74116
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
7/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
Read Cycle 2: WE = V
IH
*These parameters are sampled and are not 100% tested
Write Cycle
Parameter
Symbol
-8
-10
-12
-15
Unit
Mn
Max
Mn
Max
Mn
Max
Mn
Max
Write cycle time
tWC
8
---
10
---
12
---
15
---
ns
Address valid to end of write
tAW
5.5
---
7
---
8
---
10
---
ns
Chip enable to end of write
tCW
5.5
---
7
---
8
---
10
---
ns
Byte enable to end of write
tBW
5.5
---
7
---
8
---
10
---
ns
Data set up time
tDW
4
---
5
---
6
---
7
---
ns
Data hold time
tDH
0
---
0
---
0
---
0
---
ns
Write pulse width
tWP
5.5
---
7
---
8
---
10
---
ns
Address set up time
tAS
0
---
0
---
0
---
0
---
ns
Write recovery time (WE)
tWR
0
---
0
---
0
---
0
---
ns
Write recovery time (CE)
tWR1
0
---
0
---
0
---
0
---
ns
Output Low Z fromend of write
tWLZ
*
3
---
3
---
3
---
3
---
ns
Write to output in High Z
tWHZ
*
---
3.5
---
4
---
5
---
6
ns
tAA
tRC
Address
tAC
tLZ
tAB
tBLZ
tOE
tOLZ
CE
UB, LB
OE
Data Out
tHZ
tBHZ
tOHZ
Data valid
High impedance
相关PDF资料
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GS78116 8Mb(512K x 16Bit)Asynchronous SRAM(8M位(512K x 16位)异步静态RAM)
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