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参数资料
| 型号： | GS88237BB-V |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| 中文描述： | 256K × 36 9Mb以上SCD的/双氰胺同步突发静态存储器 |
| 文件页数： | 20/28页 |
| 文件大小： | 747K |
| 代理商： | GS88237BB-V |
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GS88237BB/D-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
27/28
2003, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Voltage
Option
Package
Speed2
(MHz)
TA3 Status4
256K x 36
GS88237BB-250V
S/DCD Pipeline
1.8 V or 2.5 V
119 BGA (var. 2)
250
C
MP
256K x 36
GS88237BB-200V
S/DCD Pipeline
1.8 V or 2.5 V
119 BGA (var. 2)
200
C
MP
256K x 36
GS88237BB-250IV
S/DCD Pipeline
1.8 V or 2.5 V
119 BGA (var. 2)
250
I
MP
256K x 36
GS88237BB-200IV
S/DCD Pipeline
1.8 V or 2.5 V
119 BGA (var. 2)
200
I
MP
256K x 36
GS88237BD-250V
S/DCD Pipeline
1.8 V or 2.5 V
165 BGA
250
C
MP
256K x 36
GS88237BD-200V
S/DCD Pipeline
1.8 V or 2.5 V
165 BGA
200
C
MP
256K x 36
GS88237BD-250IV
S/DCD Pipeline
1.8 V or 2.5 V
165 BGA
250
I
MP
256K x 36
GS88237BD-200IV
S/DCD Pipeline
1.8 V or 2.5 V
165 BGA
200
I
MP
256K x 36
GS88237BGB-250V
S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
250
C
PQ
256K x 36
GS88237BGB-200V
S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
200
C
PQ
256K x 36 GS88237BGB-250IV S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
250
I
PQ
256K x 36 GS88237BGB-200IV S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
200
I
PQ
256K x 36
GS88237BGD-250V
S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250
C
PQ
256K x 36
GS88237BGD-200V
S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200
C
PQ
256K x 36 GS88237BGD-250IV S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250
I
PQ
256K x 36 GS88237BGD-200IV S/DCD Pipeline
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200
I
PQ
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS88237BB-200IVT.
2. This part is a Pipeline mode-only part.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. MP = Mass Production. PQ = Pre-Qualification.
5.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
相关PDF资料 |
PDF描述 |
|---|---|
| GS88237BD-200T | 256K X 36 CACHE SRAM, 2.7 ns, PBGA165 |
| GS88237CB-200IT | 256K X 36 CACHE SRAM, 2.7 ns, PBGA119 |
| GS882V37BGB-360I | 256K X 36 CACHE SRAM, 1.8 ns, PBGA119 |
| GS9012E/E6 | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| GS9012G/E6 | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS88237CB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays |
| GS88237CB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays |
| GS88237CB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays |
| GS88237CB-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays |
| GS88237CB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays |
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