参数资料
型号: GS88237BB-V
厂商: GSI TECHNOLOGY
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K × 36 9Mb以上SCD的/双氰胺同步突发静态存储器
文件页数: 6/28页
文件大小: 747K
代理商: GS88237BB-V
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
Unit
0
to 70°C
–40
to 85°C
0
to 70°C
–40
to 85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x36)
Pipeline
IDD
IDDQ
290
40
300
40
240
30
250
30
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
Pipeline
ISB
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Pipeline
IDD
85
90
75
80
mA
GS88237BB/D-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
14/28
2003, GSI Technology
Notes:
1. IDD and IDDQ apply to any combination of VDD3 and VDDQ operation.
2. All parameters listed are worst case scenario.
相关PDF资料
PDF描述
GS88237BD-200T 256K X 36 CACHE SRAM, 2.7 ns, PBGA165
GS88237CB-200IT 256K X 36 CACHE SRAM, 2.7 ns, PBGA119
GS882V37BGB-360I 256K X 36 CACHE SRAM, 1.8 ns, PBGA119
GS9012E/E6 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
GS9012G/E6 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
相关代理商/技术参数
参数描述
GS88237CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays
GS88237CB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays
GS88237CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays