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参数资料
| 型号： | GTS6923 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET |
| 中文描述： | 的P -肖特基二极管功率MOSFET通道 |
| 文件页数： | 2/4页 |
| 文件大小： | 354K |
| 代理商： | GTS6923 |
GTS6923
Page: 2/4
ISSUED DATE :2006/05/04
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.03
-
V/ :
Reference to 25 , I
:
D=-1mA
Gate Threshold Voltage
VGS(th)
-0.5
-
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
10
-
S
VDS=-10V, ID=-3.5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
:
-
-1
uA
VDS=-20V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
-25
uA
VDS=-16V, VGS=0
-
50
VGS=-4.5V, ID=-3.5A
Static Drain-Source On-Resistance2
RDS(ON)
-
85
m
VGS=-2.5V, ID=-2.7A
Total Gate Charge2
Qg
-
15.6
-
Gate-Source Charge
Qgs
-
2.1
-
Gate-Drain (“Miller”) Change
Qgd
-
5.2
-
nC
ID=-3.5A
VDS=-10V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
8.2
-
Rise Time
Tr
-
9.4
-
Turn-off Delay Time
Td(off)
-
66.4
-
Fall Time
Tf
-
48
-
ns
VDS=-10V
ID=-1A
VGS=-4.5V
RG=3.3
RD=10
Input Capacitance
Ciss
-
660
-
Output Capacitance
Coss
-
285
-
Reverse Transfer Capacitance
Crss
-
130
-
pF
VGS=0V
VDS=-20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-0.83A, VGS=0V
Continuous Source Current(Body Diode)
IS
-
-0.83
A
VD= VG=0V, VS=-1.2V
Schottky Characteristics @ Tj=25
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward Voltage Drop
VF
-
0.5
V
IF=1A
Max. Reverse Leakage Current
IRM
-
100
uA
VR=20V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208 /W when mounted on Min. copper pad.
:
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