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| 型号： | GTS6923 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET |
| 中文描述： | 的P -肖特基二极管功率MOSFET通道 |
| 文件页数： | 4/4页 |
| 文件大小： | 354K |
| 代理商： | GTS6923 |
GTS6923
Page: 4/4
ISSUED DATE :2006/05/04
REVISED DATE :
SCHOTTKY DIODE
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 1. Reverse Leakage Current v.s. Junction Temperature
Fig 2. Forward Voltage Drop
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