参数资料
型号: HCT802TX
厂商: TT Electronics/Optek Technology
文件页数: 2/2页
文件大小: 0K
描述: MOSFET DUAL ENHANCE HERMETIC SMD
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 90V
电流 - 连续漏极(Id) @ 25° C: 2A,1.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 5 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
输入电容 (Ciss) @ Vds: 70pF @ 25V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: 6-SMD,无引线
供应商设备封装: 6-SMD
包装: 散装
Types HCT802, HCT802TX, HCT802TXV
Electrical Characteristics (T A = 25 o C unless specified otherwise)
Symbol
Parameters
Device
Min
Max
Units
Test Conditions
B=Both
B VDSS
Drain-Source Breakdown
B
90*
V
I D = 10 μ A*, V GS = 0
V TH
I GSS
I DSS
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
N
P
B
B
0.75
-2.0
2.5
-4.5
± 100
10*
V
V
nA
μ A
V GS = V DS , I D = 1 mA
I D = -1 mA
V GS = ± 20 V, V DS = 0
V DS = 90 V*, V GS = 0 V
B
500*
μ A
Tj = 150 o C
I D(on)
On-State Drain Current
N
P
1.5
-1.1
A
A
V DS = 25 V, V GS = 10 V
V DS = -15 V, V GS = -10 V
R DS(on) Drain-Source on Resistance
B
5
?
V GS = 10 V*, I D = 1 A*
G fs
Forward Transconductance
N
P
170
200
mmho V DS = 25 V, I D = 0.5 A
mmho V DS = -10 V, I D = -0.5 A
C ISS
C OSS
C RSS
t (on)
t (off)
Input Capacitance
Common Source Output Capaci-
tance
Reverse Transfer Capacitance
Turn-on-time
Turn-off-time
N
P
N
P
N
P
N
P
N
P
70
150
40
60
10
25
15
50
17
50
pf
pf
pf
pf
pf
pf
ns
ns
ns
ns
V DS = 25 V, V GS = 0 V, f = 1 MHz
V DS = -25 V, V GS = 0 V, f = 1 MHz
V DS = 25 V, V GS = 0 V, f = 1 MHz
V DS = -25 V, V GS = 0 V, f = 1 MHz
V DS = 25 V, V GS = 0 A, f = 1 MHz
V DS = -25 V, V GS = 0 A, f = 1 MHz
V DD = 25 V, I D = 1 A, R L = 50 ?
V DD = -25 V, I D = -0.5 A, R L = 50 ?
V DD = 25 V, I D = 1 A, R L = 50 ?
V DD = -25 V, I D = -0.5 A, R L = 50 ?
* Reverse polarity for P-Channel device
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
15-35
(972)323-2200
Fax (972)323-2396
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