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参数资料
| 型号： | HGT1S7N60C3DS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-263AB |
| 产品目录绘图： | IGBT TO-263AB Pkg |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 管件 |
September 2005
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
General Description
The HGTP7N60C3D, HGT1S7N60C3DS and
HGT1S7N60C3D are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 o C and 150 o C. The
IGBT used is developmental type TA49115. The diode
used in anti-parallel with the IGBT is developmental type
TA49057.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49121.
JEDEC TO-220AB
COLLECTOR (FLANGE)
Features
14 A, 600V at T C = 25 o C
600V Switching SOA Capability
Typical Fall Time...................140ns at T J = 150 o C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
JEDEC TO-263AB
EMITTER
COLLECTOR
GATE
GATE
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-262
EMITTER
GATE
COLLECTOR
G
C
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2005 Fairchild Semiconductor Corporation
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| HGTD1N120BNS9A | IGBT NPT N-CH 1200V 5.3A TO252AA |
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
| HGTG10N120BND | IGBT N-CH NPT 1200V 35A TO-247 |
| HGTG11N120CND | IGBT NPT N-CH 1200V 43A TO-247 |
| HGTG12N60A4D | IGBT N-CH SMPS 600V 54A TO247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶体管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
| HGT4E20N60A4DS | 功能描述:IGBT 晶体管 TO-268 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT4E30N60B3DS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT |
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