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参数资料
| 型号： | HGT1S7N60C3DS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-263AB |
| 产品目录绘图： | IGBT TO-263AB Pkg |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 管件 |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV CES
I CES
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I C = 250 μ A, V GE = 0V
V CE = BV CES , T C = 25 o C
V CE = BV CES , T C = 150 o C
600
-
-
-
-
250
2.0
V
μ A
mA
I GES
V CE(SAT)
Gate-Emitter Leakage Current
Collector to Emitter Saturation Voltage
V GE = ± 25V
I C = I C110 ,
V GE = 15V
T C = 25 o C
T C = 150 o C
-
-
-
-
1.6
1.9
± 250
2.0
2.4
nA
V
V
On Characteristics
V GE(TH)
SSOA
V GEP
Gate-Emitter Threshold Voltage
Switching SOA
Gate to Emitter Plateau Voltage
I C = 250 μ A, V CE = V GE ,
T C = 25 o C
T J = 150 o C, V CE(PK) = 480V
R G = 50 ? ,
V GE = 15V, V CE(PK) = 600V
L = 1mH
I C = I C110 , V CE = 0.5 BV CES
3.0
40
60
-
5.0
-
-
8
6.0
-
-
-
V
A
A
V
Switching Characteristics
t d(ON)I
t rI
t d(OFF)I
t fI
E ON
E OFF
Q G(ON)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
On-State Gate Charge
T J = 150 o C
I CE = I C110
V CE(PK) = 0.8 BV CES
V GE = 15V
R G = 50 ?
L = 1mH
I C = I C110 , V GE = 15V
V CE = 0.5 BV CES V GE = 20V
-
-
-
-
-
-
-
-
8.5
11.5
350
140
165
600
23
30
-
-
400
275
-
-
30
38
ns
ns
ns
ns
μ J
μ J
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
V EC
t rr
Diode Forward Voltage
Diode Reverse Recovery Time
I EC = 7A
I EC = 7A, dI EC /dt = 200A/ μ s
I EC = 1A, dI EC /dt = 200A/ μ s
-
-
-
1.9
25
18
2.5
37
30
V
ns
ns
NOTES:
3.Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I CE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
3
www.fairchildsemi.com
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相关代理商/技术参数 |
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| HGT1S7N60C3DS9A | 功能描述:IGBT 晶体管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
| HGT4E20N60A4DS | 功能描述:IGBT 晶体管 TO-268 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT4E30N60B3DS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT |
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