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参数资料
| 型号： | HGTD7N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD7N60C3S, HGTP7N60C3
Data Sheet
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25 o C
and 150 o C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
December 2001
Features
? 14A, 600V at T C = 25 o C
? 600V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . 140ns at T J = 150 o C
? Short Circuit Rating
? Low Conduction Loss
Packaging
JEDEC TO-220AB
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly Developmental Type TA49115.
Ordering Information
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
PART NUMBER
HGTD7N60C3S
HGTP7N60C3
PACKAGE
TO-252AA
TO-220AB
BRAND
G7N60C
G7N60C3
JEDEC TO-252AA
NOTE: When ordering, use the entire part number. Add the suf?x 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.
GATE
EMITTER
COLLECTOR
(FLANGE)
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
相关PDF资料 |
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| HGTG12N60C3D | IGBT UFS N-CHAN 600V 24A TO-247 |
| HGTG18N120BND | IGBT NPT N-CHAN 1200V 54A TO-247 |
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| HGTD8P50G1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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| HGTG10N120BND | 功能描述:IGBT 晶体管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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