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参数资料
| 型号： | HGTD7N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD7N60C3S, HGTP7N60C3
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD ? LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V GEM . Exceeding the rated V GE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or ?oating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
?2001 Fairchild Semiconductor Corporation
Operating Frequency Information
Figure 13 is presented as a guide for estimating device
performance for a speci?c application. Other typical
frequency vs collector current (I CE ) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f MAX1 or f MAX2 whichever is smaller at each
point. The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
f MAX1 is de?ned by f MAX1 = 0.05/(t D(OFF)I + t D(ON)I ).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other de?nitions
are possible. t D(OFF)I and t D(ON)I are de?ned in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . t D(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f MAX2 is de?ned by f MAX2 = (P D - P C )/(E OFF + E ON ). The
allowable dissipation (P D ) is de?ned by P D = (T JM - T C )/R θ JC .
The sum of device switching and conduction losses must
not exceed P D . A 50% duty factor was used (Figure 13) and
the conduction losses (P C ) are approximated by
P C = (V CE x I CE )/2. E ON and E OFF are de?ned in the
switching waveforms shown in Figure 19. E ON is the
integral of the instantaneous power loss (I CE x V CE ) during
turn-on and E OFF is the integral of the instantaneous power
loss (I CE x V CE ) during turn-off. All tail losses are included
in the calculation for E OFF ; i.e. the collector current equals
zero (I CE = 0).
HGTD7N60C3S, HGTP7N60C3 Rev. B
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