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参数资料
| 型号： | HGTD7N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD7N60C3S, HGTP7N60C3
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Speci?ed
HGTD7N60C3S HGTP7N60C3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM
Switching Safe Operating Area at T J = 150 o C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L
Short Circuit Withstand Time (Note 2) at V GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC
Short Circuit Withstand Time (Note 2) at V GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC
600
14
7
56
± 20
± 30
40A at 480V
60
0.48
100
-40 to 150
260
1
8
V
A
A
A
V
V
W
W/ o C
mJ
o C
o C
μ s
μ s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V CE(PK) = 360V, T J = 125 o C, R G = 50 ?.
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
I C = 3mA, V GE = 0V
MIN
600
16
TYP
-
30
MAX
-
-
UNITS
V
V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
I CES
V CE(SAT)
V GE(TH)
V CE = BV CES
V CE = BV CES
I C = I C110 ,
V GE = 15V
I C = 250 μ A,
T C = 25 o C
T C = 150 o C
T C = 25 o C
T C = 150 o C
T C = 25 o C
-
-
-
-
3.0
-
-
1.6
1.9
5.0
250
2.0
2.0
2.4
6.0
μ A
mA
V
V
V
V CE = V GE
Gate to Emitter Leakage Current
I GES
V GE = ± 25V
-
-
± 250
nA
Switching SOA
SSOA
T J = 150 o C
R G = 50 ?
V GE = 15V
V CE(PK) = 480V
V CE(PK) = 600V
40
6
-
-
-
-
A
A
L = 1mH
Gate to Emitter Plateau Voltage
V GEP
I C = I C110 , V CE = 0.5 BV CES
-
8
-
V
On-State Gate Charge
Q G(ON)
I C = I C110 ,
V CE = 0.5 BV CES
V GE = 15V
V GE = 20V
-
-
23
30
30
38
nC
nC
?2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
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