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参数资料
| 型号： | HGTD7N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD7N60C3S, HGTP7N60C3
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
SYMBOL
t d(ON)I
t rI
t d(OFF)I
t fI
E ON
E OFF
R θ JC
TEST CONDITIONS
T J = 150 o C
I CE = I C110
V CE(PK) = 0.8 BV CES
V GE = 15V
R G = 50 ?
L = 1.0mH
MIN
-
-
-
-
-
-
-
TYP
8.5
11.5
350
140
165
600
-
MAX
-
-
400
275
-
-
2.1
UNITS
ns
ns
ns
ns
μ J
μ J
o C/W
NOTE:
3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
Typical Performance Curves
40
DUTY CYCLE <0.5%, V CE = 10V
35 PULSE DURATION = 250 μ s
30
40
35 DUTY CYCLE <0.5%,
T C = 25 o C
30
μ
PULSE DURATION = 250 s,
12.0V
10.0V
25
20
T C = 150 o C
T C = 25 o C
25
20
V GE = 15.0V
9.0V
15
T C = -40 o C
15
8.5V
10
5
0
10
5
0
8.0V
7.5V
7.0V
4
6
8
10
12
14
0
2
4
6
8
10
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
40
PULSE DURATION = 250 μ s
35 DUTY CYCLE <0.5%, V GE = 10V
30
25
T C = -40 o C
20
15
10
5
T C = 150 o C
T C = 25 o C
40
35
30
25
20
15
10
5
PULSE DURATION = 250 μ s
DUTY CYCLE <0.5%, V GE = 15V
T C = -40 o C
T C = 25 o C
T C = 150 o C
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
?2001 Fairchild Semiconductor Corporation
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTD7N60C3S, HGTP7N60C3 Rev. B
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