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参数资料
| 型号： | HGTD7N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves
(Continued)
15
12
V GE = 15V
12
10
V CE = 360V, R G = 50 ? , T J = 125 o C
140
120
I SC
9
6
3
8
6
4
t SC
100
80
60
0
25
50
75
100
125
150
2
10
11
12
13
14
40
15
T C , CASE TEMPERATURE ( o C)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
50
40
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
500
450
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
30
20
V GE = 10V
400
350
V GE = 10V OR 15V
300
V GE = 15V
10
250
5
2
5
8
11
14
17
20
200
2
5
8
11
14
17
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
300
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
100
V GE = 10V
250
200
V GE = 10V or 15V
150
V GE = 15V
10
5
2
5
8
11
14
17
20
100
2
5
8
11
14
17
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
?2001 Fairchild Semiconductor Corporation
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTD7N60C3S, HGTP7N60C3 Rev. B
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| HGTG10N120BND | 功能描述:IGBT 晶体管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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