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参数资料
| 型号： | HGTD7N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves
(Continued)
2000
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
3000
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
1000
V GE = 10V
500
1000
100
V GE = 15V
500
V GE = 10V or 15V
40
2
5
8
11
14
17
20
100
2
5
8
11
14
17
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
100
T J = 150 o C, T C = 75 o C
R G = 50 ? , L = 1mH
50
T J = 150 o C, V GE = 15V, R G = 50 ? , L = 1mH
40
V GE = 10V
V GE = 15V
30
10
f MAX1 = 0.05/(t D(OFF)I + t D(ON)I )
f MAX2 = (P D - P C )/(E ON + E OFF )
P D = ALLOWABLE DISSIPATION
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
20
10
1
R θ JC
= 2.1 o C/W
0
2
10
20
30
0
100
200
300
400
500
600
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
V CE(PK) , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
1200
1000
800
C IES
FREQUENCY = 1MHz
600
500
400
I G(REF) = 1.044mA, R L = 50 ? , T C = 25 o C
V CE = 600V
15
12.5
10
600
300
7.5
400
200
V CE = 400V
5
200
C RES
C OES
100
V CE = 200V
2.5
0
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
?2001 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
HGTD7N60C3S, HGTP7N60C3 Rev. B
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