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参数资料
| 型号： | HGTD1N120BNS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 5.3A TO252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.9V @ 15V，1A |
| 电流 - 集电极 (Ic)（最大）： | 5.3A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD1N120BNS, HGTP1N120BN
Data Sheet
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are N on- P unch
T hrough (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Ordering Information
January 2001
Features
? 5.3A, 1200V, T C = 25 o C
? 1200V Switching SOA Capability
? Typical E OFF . . . . . . . . . . . . . . . . . . 120 μ J at T J = 150 o C
? Short Circuit Rating
? Low Conduction Loss
? Avalanche Rated
? Temperature Compensating SABER? Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
? Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
PART NUMBER
HGTD1N120BNS
PACKAGE
TO-252AA
BRAND
1N120B
JEDEC TO-220AB
HGTP1N120BN
TO-220AB
1N120BN
E
C
G
NOTE: When ordering, use the entire part number. Add the suf?x 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
COLLECTOR
(FLANGE)
Symbol
C
G
JEDEC TO-252AA
COLLECTOR
E
G
(FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
相关PDF资料 |
PDF描述 |
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| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
| HGTG10N120BND | IGBT N-CH NPT 1200V 35A TO-247 |
| HGTG11N120CND | IGBT NPT N-CH 1200V 43A TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD1N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
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