- 您现在的位置：买卖IC网 > Datasheet目录438 > HGTD1N120BNS9A (Fairchild Semiconductor)IGBT NPT N-CH 1200V 5.3A TO252AA Datasheet资料下载
参数资料
| 型号： | HGTD1N120BNS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 5.3A TO252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.9V @ 15V，1A |
| 电流 - 集电极 (Ic)（最大）： | 5.3A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves
(Unless Otherwise Speci?ed) (Continued)
300
200
100
T J = 150 o C, R G = 82 ? , L = 4mH, V CE = 960V
T C = 75 o C, VGE = 15V
IDEAL DIODE
T C
75 o C
75 o C
110 o C
110 o C
V GE
15V
13V
15V
13V
20
18
V CE = 840V, R G = 82 ? , T J = 125 o C
t SC
20
18
16
16
f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )
14
I SC
14
10
f MAX2 = (P D - P C ) / (E ON2 + E OFF )
P C = CONDUCTION DISSIPATION
12
12
5
0.5
(DUTY FACTOR = 50%)
R ?JC = 2.1 o C/W, SEE NOTES
1.0
2.0
3.0
10
13
13.5
14
14.5
10
15
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
6
6
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
5
T C = 25 o C
5
T C = 25 o C
4
3
T C = -55 o C
T C = 150 o C
4
3
T C = -55 o C
T C = 150 o C
2
2
1
PULSE DURATION = 250 μ s
DUTY CYCLE < 0.5%, V GE = 13V
1
PULSE DURATION = 250 μ s
DUTY CYCLE < 0.5%, V GE = 15V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
1000
800
R G = 82 ? , L = 4mH, V CE = 960V
T J = 150 o C, V GE = 13V
T J = 150 o C, V GE = 15V
250
200
R G = 82 ? , L = 4mH, V CE = 960V
T J = 150 o C, V GE = 13V OR 15V
150
600
400
100
T J = 25 o C, V GE = 13V OR 15V
200
T J = 25 o C, V GE = 13V
50
0
0.5
1
1.5
T J = 25 o C, V GE = 15V
2 2.5
3
0
0.5
1
1.5
2
2.5
3
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
?2001 Fairchild Semiconductor Corporation
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTD1N120BNS, HGTP1N120BN Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
| HGTG10N120BND | IGBT N-CH NPT 1200V 35A TO-247 |
| HGTG11N120CND | IGBT NPT N-CH 1200V 43A TO-247 |
| HGTG12N60A4D | IGBT N-CH SMPS 600V 54A TO247 |
| HGTG12N60C3D | IGBT UFS N-CHAN 600V 24A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD1N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
发布紧急采购，3分钟左右您将得到回复。