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参数资料
| 型号： | HGTD1N120BNS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 5.3A TO252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.9V @ 15V，1A |
| 电流 - 集电极 (Ic)（最大）： | 5.3A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD1N120BNS, HGTP1N120BN
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
SYMBOL
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
R θ JC
TEST CONDITIONS
IGBT and Diode at T J = 25 o C
I CE = 1.0A
V CE = 960V
V GE = 15V
R G = 82 ?
L = 4mH
Test Circuit (Figure 18)
IGBT and Diode at T J = 150 o C
I CE = 1.0 A
V CE = 960V
V GE = 15V
R G = 82 ?
L = 4mH
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
15
11
67
226
70
172
90
13
11
75
258
145
385
120
-
MAX
20
14
76
300
-
187
123
17
15
88
370
-
440
175
2.1
UNITS
ns
ns
ns
ns
μJ
μJ
μJ
ns
ns
ns
ns
μJ
μJ
μJ
o C/W
NOTES:
4. Turn-Off Energy Loss (E OFF ) is de?ned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves
(Unless Otherwise Speci?ed)
6
5
4
V GE = 15V
7
6
5
T J = 150 o C, R G = 82 ? , V GE = 15V, L = 2mH
4
3
3
2
2
1
1
0
25
50
75
100
125
150
0
0
200
400
600
800
1000
1200
1400
T C , CASE TEMPERATURE ( o C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
?2001 Fairchild Semiconductor Corporation
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTD1N120BNS, HGTP1N120BN Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD1N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
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