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参数资料
| 型号： | HGTD1N120BNS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 5.3A TO252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.9V @ 15V，1A |
| 电流 - 集电极 (Ic)（最大）： | 5.3A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves
(Unless Otherwise Speci?ed) (Continued)
24
R G = 82 ? , L = 4mH, V CE = 960V
28
R G = 82 ? , L = 4mH, V CE = 960V
24
20
20
T J = 25 o C, T J = 150 o C, V GE = 13V
16
T J
V GE
16
12
25 o C 13V
150 o C 13V
25 o C 15V
150 o C 15V
12
8
T J = 25 o C, T J = 150 o C, V GE = 15V
8
0
1
1.5
2
2.5
3
4
0.5
1
1.5
2
2.5
3
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
84
80
R G = 82 ? , L = 4mH, V CE = 960V
T J = 150 o C, V GE = 15V
360
320
R G = 82 ? , L = 4mH, V CE = 960V
76
280
72
68
64
60
T J = 25 o C, V GE = 13V
T J = 150 o C, V GE = 13V
T J = 25 o C, V GE = 15V
240
200
160
T J = 150 o C, V GE = 13V OR 15V
T J = 25 o C, V GE = 13V OR 15V
56
0.5
1
1.5
2
2.5
3
120
0.5
1
1.5
2
2.5
3
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
18
16
DUTY CYCLE < 0.5%, V CE = 20V
PULSE DURATION = 250 μ s
15
V CE = 800V
14
T C = -55 o C
12
V CE = 400V
V CE = 1200V
12
9
10
8
T C = 25 o C
6
6
4
2
T C = 150 o C
3
I G(REF) = 1mA, R L = 600 ? , T C = 25 o C
0
7
8
9
10
11
12
13
14
15
0
0
4
8
12
16
20
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
?2001 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTD1N120BNS, HGTP1N120BN Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD1N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
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