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参数资料
| 型号： | HGTD1N120BNS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 5.3A TO252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.9V @ 15V，1A |
| 电流 - 集电极 (Ic)（最大）： | 5.3A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 带卷 (TR) |
HGTD1N120BNS, HGTP1N120BN
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Speci?ed
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM
Switching Safe Operating Area at T J = 150 o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg
Short Circuit Withstand Time (Note 3) at V GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 3) at V GE = 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
1200
5.3
2.7
6
± 20
± 30
6A at 1200V
60
0.476
10
-55 to 150
300
260
8
13
V
A
A
A
V
V
W
W/ o C
mJ
o C
o C
o C
μ s
μ s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. I CE = 7A, L = 400 μ H, V GE = 15V, T J = 25 o C.
3. V CE(PK) = 840V, T J = 125 o C, R G = 82 ?.
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
I C = 10mA, V GE = 0V
MIN
1200
15
TYP
-
-
MAX
-
-
UNITS
V
V
Collector to Emitter Leakage Current
I CES
V CE = 1200V
T C = 25 o C
-
-
250
μ A
T C = 125 o C
T C = 150 o C
-
-
20
-
-
1.0
μ A
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = 1.0A
V GE = 15V
T C = 25 o C
T C = 150 o C
-
-
2.5
3.8
2.9
4.3
V
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V GE(TH)
I GES
SSOA
I C = 50 μ A, V CE = V GE
V GE = ± 20V
T J = 150 o C, R G = 82 ?, V GE = 15V,
6.0
-
6
7.1
-
-
-
± 250
-
V
nA
A
L = 2mH, V CE(PK) = 1200V
Gate to Emitter Plateau Voltage
V GEP
I C = 1.0A, V CE = 600V
-
9.2
-
V
On-State Gate Charge
Q G(ON)
I C = 1.0A
V CE = 600V
V GE = 15V
V GE = 20V
-
-
14
15
20
21
nC
nC
?2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD1N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
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