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参数资料
| 型号： | HGT1S20N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 45A |
| 功率 - 最大： | 164W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
Data Sheet
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25 o C and 150 o C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49178.
December 2001
Features
? 45A, 600V, T C = 25 o C
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T J = 150 o C
? Short Circuit Rating
? Low Conduction Loss
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
Ordering Information
E
C
PART NUMBER
HGTG20N60C3
HGTP20N60C3
PACKAGE
TO-247
TO-220AB
BRAND
G20N60C3
G20N60C3
G
COLLECTOR
(FLANGE)
HGT1S20N60C3S
TO-263AB
G20N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
Symbol
G
C
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
G
E
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| HGT1S7N60C3DS | IGBT UFS N-CH 600V 14A TO-263AB |
| HGTD1N120BNS9A | IGBT NPT N-CH 1200V 5.3A TO252AA |
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
| HGTG10N120BND | IGBT N-CH NPT 1200V 35A TO-247 |
| HGTG11N120CND | IGBT NPT N-CH 1200V 43A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶体管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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