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参数资料
| 型号： | HGT1S20N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 45A |
| 功率 - 最大： | 164W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves
Unless Otherwise Specified (Continued)
300
275
250
225
200
175
150
125
R G = 10 ? , L = 1mH, V CE = 480V
T J = 150 o C, V GE = 10V, V GE = 15V
T J = 25 o C, V GE = 10V, V GE = 15V
120
110
100
90
80
70
60
50
R G = 10 ? , L = 1mH, V CE = 480V
T J = 150 o C, V GE = 10V OR V GE = 15V
T J = 25 o C, V GE = 10V OR 15V
100
5
10
15
20
25
30
35
40
40
5
10
15
20
25
30
35
40
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
300
250
DUTY CYCLE <0.5%, V CE = 10V
PULSE DURATION = 250 μ s
16
14
I G (REF) = 1mA, R L = 15 ? , T C = 25 o C
12
200
150
T C = -55 o C
T C = 150 o C
10
8
V CE = 600V
100
50
T C = 25 o C
6
4
2
V CE = 200V
V CE = 400V
0
5
6
7
8
9
10
11
12
13
14
15
0
0
10
20
30
40
50
60
70
80
90
100
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
Q g , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5
FREQUENCY = 1MHz
4
C IES
3
2
C OES
1
C RES
0
0
5
10
15
20
25
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
?2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| HGT1S7N60C3DS | IGBT UFS N-CH 600V 14A TO-263AB |
| HGTD1N120BNS9A | IGBT NPT N-CH 1200V 5.3A TO252AA |
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
| HGTG10N120BND | IGBT N-CH NPT 1200V 35A TO-247 |
| HGTG11N120CND | IGBT NPT N-CH 1200V 43A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶体管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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