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参数资料
| 型号： | HGT1S20N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 45A |
| 功率 - 最大： | 164W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM
Switching Safe Operating Area at T J = 150 o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
Short Circuit Withstand Time (Note 2) at V GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC
Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC
600
45
20
300
± 20
± 30
20A at 600V
164
1.32
100
-55 to 150
300
260
4
10
V
A
A
A
V
V
W
W/ o C
mJ
o C
o C
o C
μ s
μ s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V CE(PK) = 360V, T J = 125 o C, R G = 10 ?.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
I C = 10mA, V GE = 0V
MIN
600
15
TYP
-
28
MAX
-
-
UNITS
V
V
Collector to Emitter Leakage Current
I CES
V CE = BV CES
T C = 25 o C
-
-
250
μ A
T C = 150 o C
-
-
5.0
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = I C110
V GE = 15V
T C = 25 o C
T C = 150 o C
-
-
1.4
1.5
1.8
1.9
V
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
V GE(TH)
I GES
I C = 250 μ A, V CE = V GE
V GE = ± 20V
3.4
-
4.8
-
6.3
± 250
V
nA
Switching SOA
SSOA
T J = 150 o C, R G =
10 ?, V GE = 15V,
L = 100 μ H
V CE = 480V
V CE = 600V
120
20
-
-
-
-
A
A
Gate to Emitter Plateau Voltage
V GEP
I CE = I C110 , V CE = 0.5 BV CES
-
8.4
-
V
On-State Gate Charge
Q G(ON)
I CE = I C110
V CE = 0.5 BV CES
V GE = 15V
V GE = 20V
-
-
91
122
110
145
nC
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
IGBT and Diode at T J = 25 o C
I CE = I C110
V CE = 0.8 BV CES
V GE = 15V
R G = 10 ?
L = 1mH
Test Circuit (Figure 17)
-
-
-
-
-
-
-
28
24
151
55
295
500
500
32
28
210
98
320
550
700
ns
ns
ns
ns
μ J
μ J
μ J
?2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
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