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参数资料
| 型号： | HGT1S20N60C3S9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CHAN 600V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 45A |
| 功率 - 最大： | 164W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD? LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V GEM . Exceeding the rated V GE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
?2001 Fairchild Semiconductor Corporation
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I CE ) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f MAX1 or f MAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f MAX1 is defined by f MAX1 = 0.05/(t d(OFF)I + t d(ON)I ).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t d(OFF)I and t d(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . t d(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON2 ). The
allowable dissipation (P D ) is defined by P D = (T JM - T C )/R θ JC .
The sum of device switching and conduction losses must
not exceed P D . A 50% duty factor was used (Figure 3) and
the conduction losses (P C ) are approximated by
P C = (V CE x I CE )/2.
E ON2 and E OFF are defined in the switching waveforms
shown in Figure 18. E ON2 is the integral of the
instantaneous power loss (I CE x V CE ) during turn-on and
E OFF is the integral of the instantaneous power loss
(I CE x V CE ) during turn-off. All tail losses are included in
the calculation for E OFF ; i.e., the collector current equals
zero (I CE = 0).
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
相关PDF资料 |
PDF描述 |
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| HGT1S7N60C3DS | IGBT UFS N-CH 600V 14A TO-263AB |
| HGTD1N120BNS9A | IGBT NPT N-CH 1200V 5.3A TO252AA |
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶体管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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