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参数资料
| 型号： | HGT1S12N60A4DS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT SMPS N-CH 600V D2PAK |
| 产品目录绘图： | IGBT TO-263AB Pkg |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 54A |
| 功率 - 最大： | 167W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
Data Sheet
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 o C and 150 o C. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Ordering Information
December 2001
Features
? >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
? 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T J = 125 o C
? Low Conduction Loss
? Temperature Compensating SABER? Model
www.fairchildsermi.com
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
PART NUMBER
PACKAGE
BRAND
E
HGTG12N60A4D
HGTP12N60A4D
HGT1S12N60A4DS
TO-247
TO-220AB
TO-263AB
12N60A4D
12N60A4D
12N60A4D
G
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
JEDEC TO-263AB
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
COLLECTOR
Symbol
C
G
E
(FLANGE)
JEDEC STYLE TO-247
G
E
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| HGT1S20N60C3S9A | IGBT UFS N-CHAN 600V TO-263AB |
| HGT1S7N60C3DS | IGBT UFS N-CH 600V 14A TO-263AB |
| HGTD1N120BNS9A | IGBT NPT N-CH 1200V 5.3A TO252AA |
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
| HGTG10N120BND | IGBT N-CH NPT 1200V 35A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S12N60A4S9A | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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