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参数资料
| 型号： | HGT1S12N60A4DS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT SMPS N-CH 600V D2PAK |
| 产品目录绘图： | IGBT TO-263AB Pkg |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 54A |
| 功率 - 最大： | 167W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
Unless Otherwise Specified (Continued)
115
110
105
100
95
90
R G = 10 ? , L = 500 μ H, V CE = 390V
V GE = 12V, V GE = 15V, T J = 125 o C
V GE = 12V, V GE = 15V, T J = 25 o C
90
80
70
60
50
40
30
20
R G = 10 ? , L = 500 μ H, V CE = 390V
T J = 125 o C, V GE = 12V OR 15V
T J = 25 o C, V GE = 12V OR 15V
85
2
4
6
8
10
12
14
16
18
20
22
24
10
2
4
6
8
10
12
14
16
18
20
22
24
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
250
200
DUTY CYCLE < 0.5%, V CE = 10V
PULSE DURATION = 250 μ s
T J = 25 o C
16
14
I G(REF) = 1mA, R L = 25 ? , T C = 25 o C
150
T J = -55 o C
12
10
V CE = 600 V
V CE = 400V
100
50
T J = 125 o C
8
6
4
V CE = 200V
2
0
6
7
8
9
10
11
12
13
14
15
16
0
0
10
20
30
40
50
60
70
80
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
Q G , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
1.2
1.0
R G = 10 ? , L = 500 μ H, V CE = 390V, V GE = 15V
E TOTAL = E ON2 + E OFF
10
T J = 125 o C, L = 500 μ H,
V CE = 390V, V GE = 15V
E TOTAL = E ON2 + E OFF
0.8
0.6
0.4
0.2
I CE = 24A
I CE = 12A
1
I CE = 24A
I CE = 12A
I CE = 6A
I CE = 6A
0
25
50
75
100
125
150
0.1
5
10
100
1000
T C , CASE TEMPERATURE ( o C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
?2001 Fairchild Semiconductor Corporation
R G , GATE RESISTANCE ( ? )
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
相关PDF资料 |
PDF描述 |
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| HGT1S20N60C3S9A | IGBT UFS N-CHAN 600V TO-263AB |
| HGT1S7N60C3DS | IGBT UFS N-CH 600V 14A TO-263AB |
| HGTD1N120BNS9A | IGBT NPT N-CH 1200V 5.3A TO252AA |
| HGTD7N60C3S9A | IGBT UFS N-CH 600V 14A TO-252AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S12N60A4S9A | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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