参数资料
型号: HGT1S12N60A4DS
厂商: Fairchild Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: IGBT SMPS N-CH 600V D2PAK
产品目录绘图: IGBT TO-263AB Pkg
标准包装: 50
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,12A
电流 - 集电极 (Ic)(最大): 54A
功率 - 最大: 167W
输入类型: 标准
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
10 0
0.50
0.20
Unless Otherwise Specified (Continued)
10 -1
0.10
0.05
P D
t 1
0.02
0.01
SINGLE PULSE
t 2
DUTY FACTOR, D = t 1 / t 2
PEAK T J = (P D X Z θ JC X R θ JC ) + T C
10 -2 -5
10
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTP12N60A4D
DIODE TA49371
90%
L = 500 μ H
V GE
V CE
E OFF
10%
E ON2
R G = 10 ?
DUT
90%
+
-
V DD = 390V
I CE
10%
t d(OFF)I
t fI
t rI
t d(ON)I
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
?2001 Fairchild Semiconductor Corporation
FIGURE 25. SWITCHING TEST WAVEFORMS
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
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相关代理商/技术参数
参数描述
HGT1S12N60A4DS9A 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB
HGT1S12N60A4S 制造商:Fairchild Semiconductor Corporation 功能描述:
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