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参数资料
| 型号： | HGT1S12N60A4DS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT SMPS N-CH 600V D2PAK |
| 产品目录绘图： | IGBT TO-263AB Pkg |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 54A |
| 功率 - 最大： | 167W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM
Switching Safe Operating Area at T J = 150 o C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
600
54
23
96
± 20
± 30
60A at 600V
167
1.33
-55 to 150
300
260
V
A
A
A
V
V
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T J = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
SYMBOL
BV CES
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
MIN
600
TYP
-
MAX
-
UNITS
V
Collector to Emitter Leakage Current
I CES
V CE = 600V
T J = 25 o C
-
-
250
μ A
T J = 125 o C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = 12A,
V GE = 15V
T J = 25 o C
T J = 125 o C
-
-
2.0
1.6
2.7
2.0
V
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
V GE(TH)
I GES
SSOA
V GEP
I C = 250 μ A, V CE = 600V
V GE = ± 20V
T J = 150 o C, R G = 10 ? , V GE = 15V,
L = 100 μ H, V CE = 600V
I C = 12A, V CE = 300V
-
-
60
-
5.6
-
-
8
-
± 250
-
-
V
nA
A
V
On-State Gate Charge
Q g(ON)
I C = 12A,
V CE = 300V
V GE = 15V
V GE = 20V
-
-
78
97
96
120
nC
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
IGBT and Diode at T J = 25 o C,
I CE = 12A,
V CE = 390V,
V GE = 15V,
R G = 10 ?,
L = 500 μ H,
Test Circuit (Figure 24)
IGBT and Diode at T J = 125 o C,
I CE = 12A,
V CE = 390V, V GE = 15V,
R G = 10 ?,
L = 500 μ H,
Test Circuit (Figure 24)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17
8
96
18
55
160
50
17
16
110
70
55
250
175
-
-
-
-
-
-
-
-
-
170
95
-
350
285
ns
ns
ns
ns
μ J
μ J
μ J
ns
ns
ns
ns
μ J
μ J
μ J
?2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S12N60A4S9A | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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