参数资料
型号: HGT1S12N60A4DS
厂商: Fairchild Semiconductor
文件页数: 6/8页
文件大小: 0K
描述: IGBT SMPS N-CH 600V D2PAK
产品目录绘图: IGBT TO-263AB Pkg
标准包装: 50
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,12A
电流 - 集电极 (Ic)(最大): 54A
功率 - 最大: 167W
输入类型: 标准
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
3.0
Unless Otherwise Specified (Continued)
2.4
2.5
FREQUENCY = 1MHz
2.3
DUTY CYCLE < 0.5%, V GE = 15V
PULSE DURATION = 250 μ s, T J = 25 o C
2.0
1.5
C IES
2.2
I CE = 18A
1.0
2.1
I CE = 12A
0.5
C OES
2.0
I CE = 6A
C RES
0
0
5
10
15
20
25
1.9
8
9
10
11
12
13
14
15
16
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
14
12
10
DUTY CYCLE < 0.5%,
PULSE DURATION = 250 μ s
125 o C
25 o C
90
80
70
60
dI EC /dt = 200A/ μ s
125 o C trr
125 o C tb
8
50
6
4
2
40
30
20
10
125 o C ta
25 o C trr
25 o C ta
25 o C tb
0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
7
8
9
10
11
12
V EC , FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
I EC , FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
65
60
55
125 o C tb
I EC = 12A, V CE = 390V
400
350
V CE = 390V
125 o C I EC = 12A
50
300
45
40
250
125 o C I EC = 6A
35
125 o C ta
200
30
25
150
25 o C I EC = 12A
20
15
10
25 o C ta
25 o C tb
100
50
25 o C I EC = 6A
5
200
300
400
500
600
700
800
900
1000
0
200
300
400
500
600
700
800
900
1000
di EC /dt, RATE OF CHANGE OF CURRENT (A/ μ s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
?2001 Fairchild Semiconductor Corporation
di EC /dt, RATE OF CHANGE OF CURRENT (A/ μ s)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
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相关代理商/技术参数
参数描述
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