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参数资料
| 型号： | HGT1S12N60A4DS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IGBT SMPS N-CH 600V D2PAK |
| 产品目录绘图： | IGBT TO-263AB Pkg |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 54A |
| 功率 - 最大： | 167W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications
T J = 25 o C, Unless Otherwise Specified (Continued)
PARAMETER
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
V EC
t rr
R θ JC
TEST CONDITIONS
I EC = 12A
I EC = 12A, dI EC /dt = 200A/ μ s
I EC = 1A, dI EC /dt = 200A/ μ s
IGBT
Diode
MIN
-
-
-
-
-
TYP
2.2
30
18
-
-
MAX
-
-
-
0.75
2.0
UNITS
V
ns
ns
o C/W
o C/W
NOTES:
2. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves
Unless Otherwise Specified
60
50
V GE = 15V,
70
60
T J = 150 o C, R G = 10 ? , V GE = 15V, L = 200 μ H
50
40
40
30
30
20
10
20
10
0
25
50
75
100
125
150
0
0
100
200
300
400
500
600
700
T C , CASE TEMPERATURE ( o C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
300
T C
75 o C
V G E
15V
20
18
16
V CE = 390V, R G = 10 ? , T J = 125 o C
300
275
250
14
I SC
225
100
f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )
f MAX2 = (P D - P C ) / (E ON2 + E OFF )
12
10
200
175
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R ?JC = 0.75 o C/W, SEE NOTES
T J = 125 o C, R G = 10 ? , L = 500 μ H, V CE = 390V
8
6
4
2
t SC
150
125
100
75
10
1
3
10
20
30
0
9
10
11
12
13
14
15
50
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
?2001 Fairchild Semiconductor Corporation
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S12N60A4S9A | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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