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参数资料
| 型号： | HGT1S7N60B3S9A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件页数： | 2/7页 |
| 文件大小： | 136K |
| 代理商： | HGT1S7N60B3S9A |
2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
14
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
7A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
35A at 600V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
2
s
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
12
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.
2. VCE = 360V, TJ = 125
oC, R
G = 50 .
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250A, VGE = 0V
600
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 3mA, VGE = 0V
15
28
-
V
Collector to Emitter Leakage Current
ICES
VCE = BVCES
TC = 25
oC
-
100
A
TC = 150
oC-
-
2.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110,
VGE = 15V
TC = 25
oC-
1.8
2.1
V
TC = 150
oC-
2.1
2.4
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250A, VCE = VGE
3.0
5.1
6.0
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
±100
nA
Switching SOA
SSOA
TJ = 150
oC
RG = 50
VGE = 15V
L = 100
H
VCE = 480V
42
-
A
VCE = 600V
35
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-7.7
-
V
On-State Gate Charge
QG(ON)
IC = IC110,
VCE = 0. 5BVCES
VGE = 15V
-
23
28
nC
VGE = 20V
-
30
37
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode Both at TJ = 25
oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG = 50, L = 2mH
Test Circuit (Figure 17)
-26-
ns
Current Rise Time
trI
-21-
ns
Current Turn-Off Delay Time
td(OFF)I
-
130
160
ns
Current Fall Time
tfI
-60
80
ns
Turn-On Energy (Note 4)
EON1
-72-
J
Turn-On Energy (Note 4)
EON2
-
160
200
J
Turn-Off Energy (Note 3)
EOFF
-
120
200
J
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
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