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参数资料
| 型号： | HGT1S7N60B3S9A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件页数： | 6/7页 |
| 文件大小： | 136K |
| 代理商： | HGT1S7N60B3S9A |
2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
200
C,
CAP
A
C
IT
ANCE
(
p
F
)
400
600
800
1000
1200
FREQUENCY = 1MHz
CIES
COES
CRES
t1, RECTANGULAR PULSE DURATION (s)
10-5
10-3
100
101
10-4
10-1
10-2
100
Z
θJC
,
N
O
R
MA
LI
ZED
TH
ER
MA
L
R
E
S
P
O
N
SE
10-1
10-2
t1
t2
PD
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
Test Circuit and Waveforms
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
RG = 50
L = 2mH
VDD = 480V
+
-
RHRD660
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S7N60C3D | 功能描述:IGBT 晶体管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶体管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶体管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
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