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参数资料
| 型号： | HGT1S7N60B3S9A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件页数： | 3/7页 |
| 文件大小： | 136K |
| 代理商： | HGT1S7N60B3S9A |
2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
Current Turn-On Delay Time
td(ON)I
IGBT and Diode Both at TJ = 150
oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG =50, L = 2mH
Test Circuit (Figure 17)
-24-
ns
Current Rise Time
trI
-22-
ns
Current Turn-Off Delay Time
td(OFF)I
-
230
295
ns
Current Fall Time
tfI
-
120
175
ns
Turn-On Energy (Note 4)
EON1
-80-
J
Turn-On Energy (Note 4)
EON2
-
310
350
J
Turn-Off Energy (Note 3)
EOFF
-
350
500
J
Thermal Resistance Junction To Case
RθJC
--
2.1
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the Turn-On loss of the IGBT only. EON2
is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (
oC)
I CE
,DC
COL
L
ECT
O
R
CURRENT
(
A
)
25
50
75
100
125
150
4
0
8
16
12
6
2
10
14
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
600
30
I CE
,CO
L
EC
T
O
R
T
O
E
M
IT
T
E
R
CUR
RE
NT
(
A
)
10
20
200
300
100
0
400
500
50
0
40
700
TJ = 150
oC, R
G = 50, VGE = 15V
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
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| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
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