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参数资料
| 型号： | HGT1S7N60B3S9A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件页数： | 5/7页 |
| 文件大小： | 136K |
| 代理商： | HGT1S7N60B3S9A |
2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
t dI
,
T
URN-
O
N
DEL
A
Y
T
IM
E
(n
s
)
10
5
19
11
15
20
30
40
50
60
37
13
TJ = 150
oC, V
GE = 10V
TJ = 25
oC, V
GE = 10V
TJ = 25
oC, V
GE = 15V
TJ = 150
oC, V
GE = 15V
RG = 50, L = 2mH, VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,
R
ISE
TI
M
E
(n
s
)
1
20
60
40
80
100
0
5
9
13
15
37
11
120
140
TJ = 150
oC, V
GE = 10V
TJ = 25
oC, V
GE = 10V
RG = 50, L = 2mH, VCE = 480V
TJ = 25
oC and 150oC, V
GE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
t d(
O
FF)
I,
T
URN-
OF
F
DEL
A
Y
T
IM
E
(n
s
)
59
13
15
100
150
200
250
50
37
11
RG = 50, L = 2mH, VCE = 480V
TJ = 150
oC, V
GE = 15V
TJ = 150
oC, V
GE = 10V
TJ = 25
oC, V
GE = 15V
TJ = 25
oC, V
GE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fI
,F
A
L
T
IM
E
(n
s)
15
9
13
15
80
120
100
37
11
40
60
RG = 50, L = 2mH, VCE = 480V
TJ = 150
oC, V
GE = 10V and 15V
TJ = 25
oC, V
GE = 10V and 15V
I CE
,
C
O
L
ECT
O
R
T
O
EM
IT
T
E
R
CU
RR
EN
T
(A
)
0
16
24
32
814
612
VGE, GATE TO EMITTER VOLTAGE (V)
8
40
10
TC = 25
oC
TC = 150
oC
TC = -55
oC
PULSE DURATION = 250
s
VCE = 10V
DUTY CYCLE = < 0.5%
QG, GATE CHARGE (nC)
20
0
12
15
9
6
3
012
816
28
V
GE
,
GA
T
E
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
24
4
Ig(REF) = 0.758mA, RL = 86, TC = 25
oC
VCE = 600V
VCE = 400V
VCE = 200V
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
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相关代理商/技术参数 |
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|---|---|
| HGT1S7N60C3D | 功能描述:IGBT 晶体管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶体管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶体管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
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