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参数资料
| 型号： | HGT5A40N60A4D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, TO-247, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 100K |
| 代理商： | HGT5A40N60A4D |
2-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT5A40N60A4D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
600
V
75
A
63
A
300
A
±
20
V
±
30
V
200A at 600V
625
W
5
W/
o
C
o
C
o
C
-55 to 150
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 40A,
V
GE
= 15V
-
1.7
2.7
V
-
1.5
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= V
GE
4.5
5.6
7
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 2.2
,
V
GE
= 15V
L = 100
μ
H, V
CE
= 600V
-
-
±
250
nA
Switching SOA
SSOA
200
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 40A, V
CE
= 0.5 BV
CES
-
8.5
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
350
405
nC
V
GE
= 20V
-
450
520
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
=15V
R
G
= 2.2
L = 200
μ
H
Test Circuit (Figure 24)
-
25
-
ns
Current Rise Time
t
rI
-
18
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
145
-
ns
Current Fall Time
t
fI
-
35
-
ns
Turn-On Energy (Note 2)
E
ON1
-
400
-
μ
J
Turn-On Energy (Note 2)
E
ON2
-
850
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
370
-
μ
J
HGT5A40N60A4D
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