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参数资料
| 型号： | HGT5A40N60A4D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, TO-247, 3 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 100K |
| 代理商： | HGT5A40N60A4D |
2-7
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
FIGURE 23. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
300
400
500
700
800
t
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
15
10
30
25
40
35
50
45
60
55
20
65
70
900
1000
125
o
C
t
a
25
o
C
t
a
25
o
C
t
b
125
o
C
t
b
I
EC
= 40A, V
CE
= 390V
1500
1000
500
0
200
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
1750
1250
750
250
400
2000
600
800
V
CE
= 390V
125
o
C I
EC
= 20A
125
o
C I
EC
= 40A
25
o
C I
EC
= 40A
25
o
C I
EC
= 20A
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
R
G
= 2.2
L = 200
μ
H
V
DD
= 390V
+
-
HGT5A40N60A4D
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGT5A40N60A4D
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