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参数资料
| 型号： | HGT5A40N60A4D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, TO-247, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 100K |
| 代理商： | HGT5A40N60A4D |
2-5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
22
24
26
28
30
32
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
20
10
0
40
50
60
70
30
80
34
36
38
40
42
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
40
20
20
10
0
40
50
60
70
30
80
60
120
100
80
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
T
J
= 125
o
C, T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
10
30
0
150
20
130
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
50
190
70
60
170
180
40
160
80
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V OR 15V, T
J
= 25
o
C
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
35
30
45
40
10
30
0
20
50
70
60
40
80
55
50
65
60
70
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
I
C
,
0
50
100
7
8
9
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
250
6
300
350
400
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
00
100
50
150
4
10
200
250
300
350
400
6
8
12
16
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G(REF)
= 1mA, R
L
= 7.5
, T
C
= 25
o
C
HGT5A40N60A4D
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