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参数资料
| 型号： | HGT5A40N60A4D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, TO-247, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 100K |
| 代理商： | HGT5A40N60A4D |
2-6
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
5
125
25
150
6
4
E
T
,
I
CE
= 80A
I
CE
= 20A
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+E
OFF
I
CE
= 40A
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
10
1
500
E
T
,
I
CE
= 80A
I
CE
= 40A
I
CE
= 20A
100
T
J
= 125
o
C, L = 200
μ
H
V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
10
20
30
40
50
0
2
4
8
10
12
6
60
70
80
90
100
FREQUENCY = 1MHz
14
C
IES
C
RES
C
OES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
C
,
I
CE
= 80A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
I
CE
= 40A
I
CE
= 20A
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
5
0
20
30
40
50
10
15
25
35
45
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
T
J
= 125
o
C
T
J
= 25
o
C
60
50
40
30
20
10
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
40
35
25
80
70
5
10
15
20
30
100
90
120
110
dI
EC
/dt = 200A/
μ
s
125
o
C
t
rr
125
o
C
t
a
25
o
C
t
b
25
o
C
t
a
25
o
C
t
rr
125
o
C
t
b
HGT5A40N60A4D
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