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参数资料
| 型号： | HGTD2N120BNS |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件页数： | 2/7页 |
| 文件大小： | 85K |
| 代理商： | HGTD2N120BNS |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP2N120BN,
HGTD2N120BNS
HGT1S2N120BNS
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
12
5.6
20
±
20
±
30
A
A
A
V
V
12A at 1200V
104
0.83
18
-55 to 150
W
W/
o
C
mJ
o
C
300
260
8
15
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 3A, L = 4mH, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
BV
ECS
I
CES
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
1200
-
-
V
Emitter to Collector Breakdown Voltage
15
-
-
V
Collector to Emitter Leakage Current
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
μ
A
-
40
-
-
-
0.5
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.3A,
V
GE
= 15V
-
2.45
2.7
V
-
3.6
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 20
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 51
,
V
GE
= 15V,
L = 400
μ
H, V
CE(PK)
= 1200V
I
C
= 2.3A, V
CE
= 0.5 BV
CES
I
C
= 2.3A,
V
CE
= 0.5 BV
CES
6.0
6.8
-
V
Gate to Emitter Leakage Current
-
-
±
250
nA
Switching SOA
12
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
G(ON)
-
10.2
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
24
30
nC
-
32
39
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
-
11
15
ns
Current Turn-Off Delay Time
-
185
240
ns
Current Fall Time
-
100
130
ns
Turn-On Energy (Note 4)
-
83
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 4)
-
370
500
Turn-Off Energy (Note 5)
-
195
270
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
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| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
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