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参数资料
| 型号： | HGTD2N120BNS |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件页数： | 5/7页 |
| 文件大小： | 85K |
| 代理商： | HGTD2N120BNS |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
300
1
150
250
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
4
450
350
400
5
3
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
200
2
100
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
0
50
200
250
1
150
300
400
5
4
3
2
100
350
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
C
,
0
15
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
14
15
30
T
C
= 150
o
C
T
C
= -55
o
C
250
μ
s PULSE TEST
DUTY CYCLE < 0.5%, V
CE
= 20V
10
T
C
= 25
o
C
7
5
V
G
,
Q
G
, GATE CHARGE (nC)
5
20
0
0
20
5
25
V
CE
= 800V
I
G(REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
V
CE
= 1200V
10
15
35
V
CE
= 400V
30
10
15
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
C
IES
C
OES
0.2
0.6
0.8
0.4
FREQUENCY = 1MHz
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.0
2.5
0
1.0
0
2.0
0.5
3.0
DUTY CYCLE < 0.5%, T
C
= 110
o
C
250
μ
s PULSE TEST
1.5
3.0
4.0
V
GE
= 10V
V
GE
= 15V
2.0
0.5
1.5
2.5
3.5
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
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| HGTG20N60B3D | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-252AA |
| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
| HGTD3N60A4 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT |
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