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参数资料
| 型号： | HGTD2N120BNS |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件页数： | 6/7页 |
| 文件大小： | 85K |
| 代理商： | HGTD2N120BNS |
6
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
Z
θ
J
,
0.01
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
R
G
= 51
L = 5mH
V
DD
= 960V
+
-
HGTP2N120BND
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
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| HGTG20N50C1D | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG20N60B3D | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
| HGTD2N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-252AA |
| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
| HGTD3N60A4 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT |
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