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参数资料
| 型号： | HGTD2N120BNS |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件页数： | 3/7页 |
| 文件大小： | 85K |
| 代理商： | HGTD2N120BNS |
3
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θ
JC
IGBT and Diode at T
J
= 150
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
25
30
ns
Current Rise Time
-
11
15
ns
Current Turn-Off Delay Time
-
195
260
ns
Current Fall Time
-
160
200
ns
Turn-On Energy (Note 4)
-
83
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 4)
-
725
1000
Turn-Off Energy (Note 5)
-
280
380
Thermal Resistance Junction To Case
-
-
1.2
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
25
75
100
125
150
10
12
6
2
V
GE
= 15V
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
C
,
2
4
600
800
400
200
1000
1200
0
12
14
8
6
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 1mH
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 51
, L = 5mH, V
CE
= 960V
f
M
,
0.5
10
5.0
2.0
50
1.0
100
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
V
GE
15V
110
o
C
110
o
C 12V
T
C
75
o
C
75
o
C
V
GE
15V
12V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
12
13
14
15
5
10
15
20
20
25
30
40
t
SC
I
SC
25
35
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
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| HGTD2N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
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| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
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